IRF542, IRF543, RF1S540, RF1S540SM S E M I C O N D U C T O R 25A and 28A, 80V and 100V 0.077 and 0.100 N-Channel Power MOSFETs March 1996 Features Packages JEDEC TO-220AB * 25A and 28A, 80V and 100V SOURCE DRAIN GATE * rDS(ON) = 0.077 and 0.100 * Single Pulse Avalanche Energy Rated DRAIN (FLANGE) Description The IRF540, IRF541, IRF542, IRF543, RF1S540, and RF1S540SM are N-Channel enhancement mode silicongate power field-effect transistors. All types are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers and as drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits. JEDEC TO-262AA SOURCE DRAIN GATE A DRAIN (FLANGE) JEDEC TO-263AB PACKAGING AVAILABILITY M A A PART NUMBER PACK

IRF542, IRF543, RF1S540, RF1S540SM Semiconductor 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Features Description * 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. * rDS(ON) = 0.077 and 0.100 * Single Pulse Avalanche Energy Rated * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER PACKAGE

IRF542, SEMICONDUCTOR IRF543, RF1S540, RF1S540SM 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, November 1997 N-Channel Power MOSFETs Features Description + 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate . _ power field effect transistors. They are advanced power "DS(ON) = 9.0772 and 0.10002 MOSFETs designed, tested, and guaranteed to withstand a + Single Pulse Avalanche Energy Rated specified level of energy in the breakdown avalanche mode vous of operation. All of these power MOSFETs are designed for * Nanosecond Switching Speeds applications such as switching regulators, switching conver- Linear Transfer Characteristics tors, motor drivers, relay drivers, and drivers for high power ; bipolar switching transistors requiring high speed and low + High Input Impedance gate drive power. These types can be operated directly from + Related Literature integrated circuits. - TB334 Guidelines for Soldering Surface Mount Formerly developmental type TA17421. Components to PC

IRF542, IRF543, RF1S540, RF1S540SM S E M I C O N D U C T O R 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Features Description * 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. * rDS(ON) = 0.077 and 0.100 * Single Pulse Avalanche Energy Rated * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NU

and 0.102 Single Pulse Avalanche Energy Rated* DRAIN _- (FLANGE) ===> SOURCE . P. -Di . . . it DRAIN SOA is Power-Dissipation Limited l O GATE Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Description The IRFS40, IRF541, IRF542, and IRF543 are n-channel | Terminal Diagram enhancement-mode silicon-gate power field-effect transis- tors. IRF540R, IRF541R, IRF542R and IRF543R types are N-CHANNEL ENHANCEMENT MODE advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown D avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high G speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF types are supplied in the JEDEC TO-220AB plastic Ss package. Gi di Zz So <= ec 25 a Absolu

IRF542 N-CHANNEL POWER MOSFETs =: Ss 100 Volt, 0.077 Ohm HEXFET Product Summary -220AB Plasti e TO-22 stic Packag Part Number | BVpss RDS(on) Ip The HEXFET technology is the key to International , Rectifier's advanced line of power MOSFET transistors. IRF540 100 0.077 28 The efficient geometry and unique processing of this latest . 28 State of the Art design achieves: very low on-state IRFo41 80 0.077 resistance combined with high transconductance, superior IRF542 100 0.100 25 reverse energy and diode recovery dv/dt capability. IRF543 80 0.100 25 The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage FEATURES: control, very fast switching, ease of paralleling and tes . temperature stability of the electrical parameters. a Repetitive Avalanche Ratings M Dynamic dv/dt Rating They are well suited for applications such as switching ; i j power supplies, motor controls, inverters, choppers, audio m@ = Simple Drive Requirements amplifiers and

IRF542 100 0.11 24 IRF543 60 0.11 24 TO-220AB 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE N-Channel Enhancement Mode Transistors TOP VIEW O ABSOLUTE MAXIMUM RATINGS (Tc = 25C Unless Otherwise Noted) 123 IRF PARAMETERS/TEST CONDITIONS SYMBOL 540 541 542 543 UNITS Gate-Source Voltage Ves +20 +20 +20 +20 Vv Continuous Drain Current Te = 25C Ip 27 27 24 24 To = 100C 17 17 15 15 A Pulsed Drain Current! lp 108 108 96 96 Avalanche Current (See Figure 9) lar 27 27 27 27 Repetitive Avalanche Energy? L= 0.1 mH Ear 36 36 36 36 mJ Power Dissipation Toe = 25C Pp 125 125 125 125 Ww To = 100C 50 50 50 50 Operating Junction & Storage Temperature Range | Ty, Tetg ~55 to 150 C Lead Temperature ('/,,_ from case for 10 sec.) Th 300 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case Rihuc 1.0 Junction-to-Ambient RihJa 80 K/W Case-to-Sink Rincs 1.0 'Pulse width limited by maximum junction temperature (refer to transient thermal impedance data, Figure 11). 2Duty cycle < 1%.IRF540

times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability TO-220 IRF540/541 342/543 PRODUCT SUMMARY Part Number Vos Rosion | Ib IRF540 100V /0.077N' 28A IRF541 'B0V 0.0770| 28a IRF542 100V | 0.10 25A IRF543- : 80vV | 0 400 | OSA MAXIMUM RATINGS Characteristics Symbol IRF540 IRF541 IRF542 IRF543 | Drain-Source Voltage (1) :_. Vpss 100 : | Drain-Gate Voltage (Ras= 1.0M2)(1) Voorn | 100 | | -Gate-Source Voltage - Ves a : Continuous Drain Current Tc=25C _lp | 28 {| | Continuous Drain Current Tc=100C | Ib 20 Drain CurrentPulsed (3) . Jom 110 > | Gate CurrentPulsed _ 7 | tem rn Single Pulsed Avalanche Energy (4) Eas os Avalanche Current tag 8 Total Power Dissipation @ Tc=25C Po | Derate above 25C _ Oneratng an Storage Ta Tata | 88 10 189 c Maximum Lead Temp. for Soldering Po Purposes, 1/8 from case for 5 seconds Notes: (1) Tj=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pul

ON 27CROSS REFERENCE INDUSTRY $GS-THOMSON INDUSTRY SGS-THOMSON STANDARD | SGS-THOMSON | nearest | PAGE | cranpanp | SGS-THOMSON | \eanesr | PAGE IRF342 s@sps75 | 577 J IRFS41Fi | IRFS41FI 295 IRF350 IRF350 273 [| IRFS41P | IRF541FI 295 IRF351 IRF350 273 | IRF542 IRF542 295 IRF352 IRF350 273 | IRFS42FI | IRF542FI 295 IRF353 IRF350 273 | IRF542P | IRF542F I 295 IRF440 s@sPs79_ | 589 | IRF543 IRF543 295 IRF 441 s@sps79 | 589 | IRF543F1 | IRF543F1 295 IRF442 s@sps79 | ss9 | IRF543P | IRFS43F! 295 IRF443 SGSP579 | 589 | IRF610 SGSP317_| 469 IRF450 IRF450 279 | IRF611 SGSP317_ | 469 IRF451 IRF451 279 | IRF612 SGSP317__| 469 IRF452 IRF452 279 | IRF613 SGSP317_ | 469 IRF453 IRF453 279 | IRF620 IRF620 301 IRF510 IRF510 + [uRFe20FI | IRF620FI 301 IRF511 IRF511 + [uRF6e20P | IRF620FI 301 IRF512 IRF512 * [IRF621 IRF621 301 IRF513 IRF513 + [uRFe2iFt | IRF621EI 301 IRF520 IRF520 285 | IRFe21P | IRF62IFI 301 IRF520F1 | IRF520F I 285 | IRF622 IRF622 301 IRF520P

s(on) = 0.0772 and 0.102 Single Pulse Avalanche Energy Rated* (FLANGE) ny SOURCE SOA is Power-Dissipation Limited Oo [==> DRAIN | S===>>. GATE Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Description The IRF540, IRF541, IRF542, and IRF543 are n-channel | Terminal Diagram enhancement-mode silicon-gate power field-effect transis- tors. IRF540R, IRF541R, IRF542R and IRF543R types are N-CHANNEL ENHANCEMENT MODE advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown D avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high G speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF types are supplied in the JEDEC TO-220AB plastic Ss package. a du 2M zo <= cae z a Absolut

S 27CROSS REFERENCE INDUSTRY SGS-THOMSON INDUSTRY SGS-THOMSON STANDARD | SGS-THOMSON | Neapecr | PAGE J ctannann | SGS-THOMSON | Negnect | PAGE IRF342 sesps75 | 577 | IRFS541FI | IRF541FI 295 IRF350 IRF350 273 J IRF541P | IRF541F | 295 IRF351 IRF350 273 | IRF542 IRF542 295 IRF352 IRF350 273 | IRF542F1 | IRF542F 1 295 IRF353 IRF350 273 | iRFS42P | IRF542F I 295 IRF440 SGsPs79 | 589 | IRF543 IRF543 295 IRF 441 sesps79 | se9 | IRF543FI | IRF5436I 295 IRF 442 sqsps79 | seo | IRFS543P | IRF543FI 295 IRF443 sa@sps79 | se9 | IRF610 SGSP317 | 469 IRF450 IRF450 279 | IRF611 SGSP317 | 469 IRF451 IRF 451 279 | IRF612 SGSP317_| 469 IRF452 IRF452 279 | IRF613 SGSP317__| 469 IRF453 IRF453 279 | IRF620 IRF620 301 IRF510 IRF510 + |IRFe20F! | IRF620FI 301 IRF511 IRF511 + |Turrezop | iRF620FI 301 IRF512 IRF512 * [iRFe21 IRF621 301 IRF513 IRF513 + Jorre2tel | iAF621FI 301 IRF520 IRF520 285 | IRF621P | IRF621FI 301 IRF520F1 | IRF520FI 285 | IRFe22 IRF622 301 IRF520

IRF542, IRF543 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 24 Aand 27A,60V-100V N-CHANNEL ENHANCEMENT MODE Sostom = 0.085 QO and 0.11 2 5 Features: s SOA is power-dissipation limited a Nanosecond switching speeds a Linear transfer characteristics 6 a High input impedance m Majority carrier device $s 92CS$-33741 TERMINAL DIAGRAM The IRF540, IRF541, IRF542, and IRF543 are n-channel enhancement-mode silicon-gate power field-effect transis- TERMINAL DESIGNATION tors designed for applications such as switching regula- tors, switching converters, motor drivers, relay drivers, and SOURCE drivers for high-power bipolar switching transistors requir- S | ing high speed and low gate-drive power. These types can (ANGE) DRAIN be operated directly from integrated circuits. QC Pets The IRF-types are supplied in the JEDEC TO-220AB plastic Ss Dare package. TOP VIEW 9208-39526 JEDEC TO-220AB Absolute Maximum Ratings Parameter IRF540 iRF541 (RF542 (RF543

52 IRF253 2-103 2-103 2-103 2-103 IRF530 IRF531 IRF532 IRF533 2-72 2-72 2-72 2-72 IRF830 IRF831 IRF832 IRF833 2-132 2-132 2-132 2-132 FRP1615 FRP1615CC FRP1620 FRP1620CC 2-55 2-59 2-55 2-59 IRF320 IRF321 IRF322 IRF323 2-107 2-107 2-107 2-107 IRF540 IRF541 IRF542 IRF543 2-78 2-78 2-78 2-78 IRF840 IRF841 IRF842 IRF843 2-138 2-138 2-138 2-138 FRP2005CC FRP2010CC FRP2015CC FRP2020CC 2-51 2-51 2-51 2-51 IRF330 IRF331 IRF332 IRF333 2-112 2-112 2-112 2-112 IRF610 IRF611 IRF612 IRF613 2-152 2-152 2-152 2-152 IRFC110 IRFC120 IRFC130 IRFC140 3-6 3-6 3-6 3-6 * Alpha-Numeric Index Power MOSFETs and Ultra-Fast Recovery Rectifiers Fairchild Part Number Page Number Fairchild Part Number Page Number Fairchild Part Number Page Number Fairchild Part Number Page Number IRFC150 IRFC210 IRFC220 IRFC230 3-6 3-6 3-6 3-6 IRFP241 IRFP242 IRFP243 IRFP250 4-8 4-8 4-8 4-8 MTM4N50 MTM5N35 MTM5N40 MTM7N45 2-132 2-112 2-112 2-138 MTP4N50 MTP5N35 MTP5N40 MTP7N18 2-132 2-112 2-112 2-87 IRFC240 IRFC250 IRFC310 IRFC320 3-6 3-6 3-6

D84DK1 1 GESY ZVNO1A4L 3 FERB SxI IRF643 3 GESY | MTP20N10 ZVNO209L 9 FERB D84DK2 1 GESY STX VNO401D a SIX INR BUZ21 + APX STX IRF531 1 INR ZVNO2A2L 3 FERB SxI MTP10N15 3 MOTA SIEG ZVNO210L a FERB IRF543 1 INR ZVNO2A3L 3 FERB VNO600D 3 SIX MTP12N20 3 MOTA IRF542 1 SIX STX SDT11A 1 SOD STX VN1106N5 a STX MTP20N15 3 MOTA RFP15N12 1 RCA ZVN1106L a FERB SFN531 + SOD ZVNO2AL 3 FERB VN1204N5 a STX PM1510P a GIC SDT21 + SODI STX TX131 + TXC STX VN1206N5 3 STX RFM10N15 a RCA Buz21 3 SIT ZVN1108L 3 FERB VNO601D 1 SIX ZVN11A2L 3 FERB VN2306N5 3 STX RFP10N12 3 RCA Buz31 3 APX STX 2SK345 a HITJ STX ZVNO1A2L 3 FERB RFPI1ON15 3 RCA SIEG ZVN1109L. 3 FERB 2SK346 a HITJ ZVN1M1A3L 3 FERB STX RFP12N18 3 RCA BUZ71 3 SIEG STX 2SK428 a HITJ STX ZVNO1A3L 3 FERB RFP12N20 3 RCA D84DK2 3a GESY ZVN1110L 3 FERB BSR80 3 Sxl ZVN12A2L 3 FERB STX RFP15N12 3 RCA D84DL1 3 GESY STX BUZ10 3 SIEG STX ZVNO1A4L 3 FERB SFN640 3 SOD O84DL2 3 GESY ZVN1206L 9 FERB SIx ZVN12A3L 3 FERB STX SFN643 3 SOD D84EL1 3 GESY STX BUZ10A 3 SIT STX ZVN

IRF542R, IRF543R Avalanche Energy Rated N-Channel Power MOSFETs 27A and 24A, 100V-60V fos(on) = 0.085Q and 0.110 Features: BH Single pulse avalanche energy rated @ SOA is power-dissipation limited lM Nanosecond switching speeds @ Linear transfer characteristics Hf High input impedance The IRF540R, IRF541R, IRF542R and IRF543R are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown File Number 2009 TERMINAL DIAGRAM 0 9208-42658 N-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATION avalanche mode of operation. These are n-channel en- cS SOURCE hancement-mode silicon-gate power field-effect transis- pRAIN ! tors designed for applications such as switching regulators, (FLANGE) -______ DRAIN switching converters, motor drivers, relay drivers, and driv- OC ers for high-power bipolar switching transistors requiring = => high speed and low gate-drive power. These types can be GATE operated directly from integrated circuits. TOP VIEW 9