8TQ100SPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES * * * * Base cathode 2 * D2PAK 3 Anode 1 N/C * * * 175 C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Halogen-free according to IEC 61249-2-21 definition Compliant to RoHS directive 2002/95/EC * AEC-Q101 qualified PRODUCT SUMMARY DESCRIPTION IF(AV) 8A VR 80 V/100 V The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM Range IFSM tp = 5
1 1 0 0 ME 8TQ080STRL Discrete Schottky D2PAK 800 80V 8A Schottky Discrete Diode in a D2-Pak package 0 0 0 0 ME 8TQ080STRR Discrete Schottky D2PAK 800 80V 8A Schottky Discrete Diode in a D2-Pak package 0 0 0 0 ME 8TQ080S Discrete Schottky D2PAK 0 0 0 0 ME 8TQ100PBF Discrete Schottky TO220 1 1 0 0 CH 8TQ100 Discrete Schottky TO220 0 0 0 0 CH 8TQ100G Discrete Schottky TO220 50 80V 8A Schottky Discrete Diode in a D2-Pak package 100V 8A Schottky Discrete Diode in a TO-220AC 50 package 100V 8A Schottky Discrete Diode in a TO-220AC 50 package 100V 8A Schottky Discrete Diode in a TO-220AC 50 package 0 0 0 0 CH http://www.szshouhe.com ME ME ME ME CH CH ME ME ME ME Email: sales@szshouhe.com SHENZHEN SHOUHE TECHNOLOGY CO., LTD. 8TQ100GSTRL 8TQ100GSTRR TEL: 0755-8380 8450 FAX: 0755-8380 8425 Discrete Schottky Discrete Schottky D2PAK D2PAK 800 100V 8.000A D2PAK 800 100V 8.000A D2PAK 0 0 0 0 0 0 0 ME 0 ME 8TQ100GS Discrete Schottky 8TQ100<
8TQ100SHM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 D2PAK (TO-263AB) * * * * 175 C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C 3 Anode 1 N/C PRODUCT SUMMARY IF(AV) 8A * AEC-Q101 qualified meets JESD 201 class 1A whisker test VR 80 V, 100 V VF at IF 0.58 V IRM 7 mA at 125 C TJ max. 175 C EAS 7.5 mJ Package D2PAK (TO-263AB) Diode variation Single * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power s
8TQ100S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 * * * * 3 Anode 1 D2PAK 175 C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C N/C PRODUCT SUMMARY * Designed and qualified according to JEDEC(R)-JESD 47 IF(AV) 8A VR 80 V, 100 V * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 VF at IF 0.58 V IRM 7 mA at 125 C TJ max. 175 C EAS 7.5 mJ Package TO-263AB (D2PAK) Diode variation Single die DESCRIPTION The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, c
8TQ100GPbF Vishay High Power Products Schottky Rectifier FEATURES (R) * 175 C TJ operation * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Low forward voltage drop * High frequency operation * Guard ring for enhanced ruggedness and long term reliability * Lead (Pb)-free ("PbF" suffix) * Designed and qualified for industrial level Base cathode 3 Anode 1 Cathode TO-220AC DESCRIPTION The 8TQ...GPbF schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. PRODUCT SUMMARY IF(AV) 8A VR 100 V MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VALUES UNITS 8 A 100 V Retangular waveform VRRM IFSM at tp = 5 s sine 850 A VF at 8 Apk, TJ = 125 C 0.58 V TJ Range - 55 - 175 C VOLTAGE RATIN
8TQ100S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 * * * * 175 C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C 2 1 3 Anode 1 3 N/C D2PAK (TO-263AB) PRIMARY CHARACTERISTICS * Designed and qualified according to JEDEC(R)-JESD 47 IF(AV) 8A VR 80 V, 100 V VF at IF 0.58 V * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 IRM 7 mA at 125 C TJ max. 175 C EAS 7.5 mJ Package D2PAK (TO-263AB) Circuit configuration Single DESCRIPTION The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in
8TQ100SPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES * * * * Base cathode 2 * D2PAK 3 Anode 1 N/C * * * 175 C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Halogen-free according to IEC 61249-2-21 definition Compliant to RoHS directive 2002/95/EC * AEC-Q101 qualified PRODUCT SUMMARY DESCRIPTION IF(AV) 8A VR 80 V/100 V The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM Range IFSM tp = 5
voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Case Styles 8TQ...G Base Cathode 1 Cathode 3 Anode TO-220AC www.irf.com 1 8TQ...G Series Final PD-20686 rev. A 01/06 Voltage Ratings Part number VR 8TQ080G 8TQ100G 80 100 Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters 8TQ Units 8 A 50% duty cycle @ TC = 157 C, rectangular wave form A Following any rated load condition and 10ms Sine or 6ms Rect. pulse with rated VRRM applied IF(AV) Max. Average Forward Current * See Fig. 5 IFSM Max. Peak One Cycle Non-Repetitive 850 Surge Current * See Fig. 7 230 EAS Non-Repetitive Avalanche Energy 7.50 mJ IAR Repetitive Avalanche Current 0.50 A Conditions 5s Sine or 3s Rect. pulse TJ = 25 C, IAS = 0.50 Amps, L = 60 mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM 8TQ Max. Forward Voltage Drop (1) * See Fig. 1 IRM Max.
tage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Case Styles 8TQ... GS Base Cathode 1 Cathode 3 Anode D2PAK www.irf.com 1 8TQ...GS Series Bulletin PD-20837 rev. A 01/06 Voltage Ratings Part number VR 8TQ080GS 8TQ100GS 80 100 Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters 8TQ Units 8 A IF(AV) Max. Average Forward Current * See Fig. 5 IFSM Max. Peak One Cycle Non-Repetitive 850 Surge Current * See Fig. 7 230 EAS Non-Repetitive Avalanche Energy 7.50 mJ IAR Repetitive Avalanche Current 0.50 A A Conditions 50% duty cycle @ TC = 157 C, rectangular wave form 5s Sine or 3s Rect. pulse 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 C, IAS = 0.50 Amps, L = 60 mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM 8TQ Max. Forward Voltage Drop (1) * See Fig. 1 IRM Max.
dness and long term reliability Case Styles 8TQ... 8TQ... S Base Cathode Base Cathode 2 1 Cathode TO-220 Document Number: 93414 1 3 Anode 3 Anode N/C D2PAK www.vishay.com 1 8TQ... Series Bulletin PD-20561 rev. F 06/06 Voltage Ratings Part number VR 8TQ080 8TQ100 80 100 Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current * See Fig. 5 IFSM 8TQ Units 8 A Max. Peak One Cycle Non-Repetitive 850 Surge Current * See Fig. 7 230 EAS Non-Repetitive Avalanche Energy 7.50 mJ IAR Repetitive Avalanche Current 0.50 A A Conditions 50% duty cycle @ TC = 157 C, rectangular wave form Following any rated load condition and 10ms Sine or 6ms Rect. pulse with rated V RRM applied 5s Sine or 3s Rect. pulse TJ = 25 C, IAS = 0.50 Amps, L = 60 mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM 8TQ Max. Forward Voltage Drop (1) * See Fig. 1 IRM Max.
8TQ100-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 2 * 175 C TJ operation * Low forward voltage drop * High frequency operation * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 1 1 Cathode 3 3 Anode 2L TO-220AC * Guard ring for enhanced ruggedness and long term reliability * Designed and qualified according to JEDEC(R)-JESD 47 PRIMARY CHARACTERISTICS IF(AV) 8A VR 60 V, 80 V, 100 V VF at IF 0.58 V IRM max. 7 mA at 125 C TJ max. 175 C EAS 7.5 mJ Package 2L TO-220AC Circuit configuration Single * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes
anced ruggedness and long term reliability Lead-Free ("PbF" suffix) Case Styles 8TQ... GSPbF Base Cathode 1 Cathode 3 Anode D2PAK Document Number: 94264 www.vishay.com 1 8TQ...GSPbF Series Bulletin PD-21165 09/06 Voltage Ratings Part number VR 8TQ080GSPbF 8TQ100GSPbF 80 100 Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters 8TQ Units 8 A IF(AV) Max. Average Forward Current * See Fig. 5 IFSM Max. Peak One Cycle Non-Repetitive 850 Surge Current * See Fig. 7 230 EAS Non-Repetitive Avalanche Energy 7.50 mJ IAR Repetitive Avalanche Current 0.50 A A Conditions 50% duty cycle @ TC = 157 C, rectangular wave form 5s Sine or 3s Rect. pulse 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 C, IAS = 0.50 Amps, L = 60 mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM 8TQ Max. Forward Voltage Drop (1) * See Fig. 1 IRM M
8TQ100SPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES * * * * Base cathode 2 * D2PAK 3 Anode 1 N/C * * * 175 C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Halogen-free according to IEC 61249-2-21 definition Compliant to RoHS directive 2002/95/EC * AEC-Q101 qualified PRODUCT SUMMARY DESCRIPTION IF(AV) 8A VR 80 V/100 V The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM Range IFSM tp = 5
rd ring for enhanced ruggedness and long term reliability Case Styles 8TQ... 8TQ... S Base Cathode Base Cathode 2 1 Cathode TO-220 www.irf.com 1 3 Anode 3 Anode N/C D2PAK 1 8TQ... Series Bulletin PD-20561 rev. F 06/06 Voltage Ratings Part number VR 8TQ080 8TQ100 80 100 Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current * See Fig. 5 IFSM 8TQ Units 8 A Max. Peak One Cycle Non-Repetitive 850 Surge Current * See Fig. 7 230 EAS Non-Repetitive Avalanche Energy 7.50 mJ IAR Repetitive Avalanche Current 0.50 A A Conditions 50% duty cycle @ TC = 157 C, rectangular wave form Following any rated load condition and 10ms Sine or 6ms Rect. pulse with rated V RRM applied 5s Sine or 3s Rect. pulse TJ = 25 C, IAS = 0.50 Amps, L = 60 mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM 8TQ Max. Forward Voltage Drop (1) * See Fig. 1 IRM Max.
ar waveform VRRM Range IFSM at tp = 5 s sine VF at 8 Apk, TJ = 125 C TJ Range VALUES UNITS 8 A 60/100 V 850 A 0.58 V - 55 to 175 C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM 8TQ060PbF 8TQ080PbF 8TQ100PbF UNITS 60 80 100 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS 8TQ UNITS 8 A Maximum average forward current See fig. 5 IF(AV) 50 % duty cycle at TC = 157 C, rectangular waveform Maximum peak one cycle non-repetitive surge current IFSM Following any rated load condition and with rated 10 ms sine or 6 ms rect. pulse VRRM applied 230 EAS TJ = 25 C, IAS = 0.50 A, L = 60 mH 7.50 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A 5 s sine or 3 s rect. pulse See fig. 7 Non-repetitive avalanche energy Repetitive avalanche current 850 A International Rectifier, IR, and the IR logo are registered trademarks of the International Rectifier Corporation Document Number: 94265 Re