8TQ100GPbF Vishay High Power Products Schottky Rectifier FEATURES (R) * 175 C TJ operation * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Low forward voltage drop * High frequency operation * Guard ring for enhanced ruggedness and long term reliability * Lead (Pb)-free ("PbF" suffix) * Designed and qualified for industrial level Base cathode 3 Anode 1 Cathode TO-220AC DESCRIPTION The 8TQ...GPbF schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. PRODUCT SUMMARY IF(AV) 8A VR 100 V MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VALUES UNITS 8 A 100 V Retangular waveform VRRM IFSM at tp = 5 s sine 850 A VF at 8 Apk, TJ = 125 C 0.58 V TJ Range - 55 - 175 C VOLTAGE RATIN
8TQ100GSPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES * * * * Base cathode 2 * D2PAK 3 Anode 1 N/C * * * * PRODUCT SUMMARY 175 C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Halogen-free according to IEC 61249-2-21 definition Compliant to RoHS directive 2002/95/EC AEC-Q101 qualified DESCRIPTION IF(AV) 8A VR 80 V/100 V The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM Range VALUES UNI
8TQ100GSPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES * * * * Base cathode 2 * D2PAK 3 Anode 1 N/C * * * * PRODUCT SUMMARY 175 C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Halogen-free according to IEC 61249-2-21 definition Compliant to RoHS directive 2002/95/EC AEC-Q101 qualified DESCRIPTION IF(AV) 8A VR 80 V/100 V The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM Range VALUES UNI
S UNITS 8 A Rectangular waveform VRRM 100 V IFSM tp = 5 s sine 850 A VF 8 Apk, TJ = 125 C 0.58 V TJ Range - 55 to 175 C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-8TQ080GPbF VS-8TQ080G-N3 VS-8TQ100GPbF VS-8TQ100G-N3 UNITS 80 80 100 100 V ABSOLUTE MAXIMUM RATINGS SYMBOL TEST CONDITIONS VALUES Maximum average forward current See fig. 5 IF(AV) 50 % duty cycle at TC = 157 C, rectangular waveform 8 Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 0.50 A, L = 60 mH 7.50 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A PARAMETER Repetitive avalanche current Revision: 11-Oct-11 5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 850 UNITS A 230 Document Number: 94263 1 For technical questions within your region: DiodesAmericas@vi
S UNITS 8 A Rectangular waveform VRRM 100 V IFSM tp = 5 s sine 850 A VF 8 Apk, TJ = 125 C 0.58 V TJ Range - 55 to 175 C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-8TQ080GPbF VS-8TQ080G-N3 VS-8TQ100GPbF VS-8TQ100G-N3 UNITS 80 80 100 100 V ABSOLUTE MAXIMUM RATINGS SYMBOL TEST CONDITIONS VALUES Maximum average forward current See fig. 5 IF(AV) 50 % duty cycle at TC = 157 C, rectangular waveform 8 Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 0.50 A, L = 60 mH 7.50 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A PARAMETER Repetitive avalanche current Revision: 11-Oct-11 5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 850 UNITS A 230 Document Number: 94263 1 For technical questions within your region: DiodesAmericas@vi
8TQ100GPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES (R) * * * * 175 C TJ operation Pb-free Low forward voltage drop Available High frequency operation RoHS* High purity, high temperature epoxy COMPLIANT encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Lead (Pb)-free ("PbF" suffix) * Designed and qualified for industrial level Base cathode 2 TO-220AC 1 Cathode 3 Anode DESCRIPTION The 8TQ...GPbF Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. PRODUCT SUMMARY IF(AV) 8A VR 100 V MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES Rectangular waveform VRRM UNITS 8 A 100 V IFSM tp = 5 s sine 850 A VF 8 Apk, TJ = 125 C 0.58 V
8TQ100GPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES * * * * 175 C TJ operation Pb-free Low forward voltage drop Available High frequency operation High purity, high temperature epoxy RoHS* COMPLIANT encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Lead (Pb)-free ("PbF" suffix) * Designed and qualified for industrial level Base cathode 2 TO-220AC 3 Anode 1 Cathode DESCRIPTION PRODUCT SUMMARY IF(AV) 8A VR 100 V The 8TQ...GPbF Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES Rectangular waveform VRRM UNITS 8 A 100 V IFSM tp = 5 s sine 850 A VF 8 Apk, TJ = 125 C 0.58 V TJ
8TQ100GPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES * * * * 175 C TJ operation Pb-free Low forward voltage drop Available High frequency operation High purity, high temperature epoxy RoHS* COMPLIANT encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Lead (Pb)-free ("PbF" suffix) * Designed and qualified for industrial level Base cathode 2 TO-220AC 3 Anode 1 Cathode DESCRIPTION PRODUCT SUMMARY IF(AV) 8A VR 100 V The 8TQ...GPbF Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES Rectangular waveform VRRM UNITS 8 A 100 V IFSM tp = 5 s sine 850 A VF 8 Apk, TJ = 125 C 0.58 V TJ
2-Pak package 0 0 0 0 ME 8TQ080STRR Discrete Schottky D2PAK 800 80V 8A Schottky Discrete Diode in a D2-Pak package 0 0 0 0 ME 8TQ080S Discrete Schottky D2PAK 0 0 0 0 ME 8TQ100PBF Discrete Schottky TO220 1 1 0 0 CH 8TQ100 Discrete Schottky TO220 0 0 0 0 CH 8TQ100G Discrete Schottky TO220 50 80V 8A Schottky Discrete Diode in a D2-Pak package 100V 8A Schottky Discrete Diode in a TO-220AC 50 package 100V 8A Schottky Discrete Diode in a TO-220AC 50 package 100V 8A Schottky Discrete Diode in a TO-220AC 50 package 0 0 0 0 CH http://www.szshouhe.com ME ME ME ME CH CH ME ME ME ME Email: sales@szshouhe.com SHENZHEN SHOUHE TECHNOLOGY CO., LTD. 8TQ100GSTRL 8TQ100GSTRR TEL: 0755-8380 8450 FAX: 0755-8380 8425 Discrete Schottky Discrete Schottky D2PAK D2PAK 800 100V 8.000A D2PAK 800 100V 8.000A D2PAK 0 0 0 0 0 0 0 ME 0 ME 8TQ100GS Discrete Schottky 8TQ100STRRPBF Discrete Schottky 8TQ100STRLPBF Discrete Schottky D2PAK D2PAK D2PAK 50 100V 8A Schottky Discrete Diode in a D2-P
8TQ100GPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES * * * * 175 C TJ operation Pb-free Low forward voltage drop Available High frequency operation High purity, high temperature epoxy RoHS* COMPLIANT encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Lead (Pb)-free ("PbF" suffix) * Designed and qualified for industrial level Base cathode 2 TO-220AC 3 Anode 1 Cathode DESCRIPTION PRODUCT SUMMARY IF(AV) 8A VR 100 V The 8TQ...GPbF Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES Rectangular waveform VRRM UNITS 8 A 100 V IFSM tp = 5 s sine 850 A VF 8 Apk, TJ = 125 C 0.58 V TJ
8TQ100GSPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES * 175 C TJ operation Base cathode 2 * Low forward voltage drop * High frequency operation * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 3 Anode 1 D2PAK N/C * Guard ring for enhanced ruggedness and long term reliability * Compliant to RoHS directive 2002/95/EC * Halogen-free according to IEC 61249-2-21 definition * Designed and qualified for industrial level DESCRIPTION PRODUCT SUMMARY IF(AV) 8A VR 80 V/100 V The 8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS 8 A 80/100 V tp = 5 s sine 850 A 8 Apk, TJ = 125 C 0.58 V - 55 to 175 C IF(
anced ruggedness and long term reliability Lead-Free ("PbF" suffix) Case Styles 8TQ... GSPbF Base Cathode 1 Cathode 3 Anode D2PAK Document Number: 94264 www.vishay.com 1 8TQ...GSPbF Series Bulletin PD-21165 09/06 Voltage Ratings Part number VR 8TQ080GSPbF 8TQ100GSPbF 80 100 Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters 8TQ Units 8 A IF(AV) Max. Average Forward Current * See Fig. 5 IFSM Max. Peak One Cycle Non-Repetitive 850 Surge Current * See Fig. 7 230 EAS Non-Repetitive Avalanche Energy 7.50 mJ IAR Repetitive Avalanche Current 0.50 A A Conditions 50% duty cycle @ TC = 157 C, rectangular wave form 5s Sine or 3s Rect. pulse 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 C, IAS = 0.50 Amps, L = 60 mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM 8TQ Max. Forward Voltage Drop (1) * See Fig. 1 IRM M
nce Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Case Styles 8TQ... GS Base Cathode 1 Cathode 3 Anode D2PAK 1 8TQ...GS Series Bulletin PD-20837 09/04 Voltage Ratings Part number VR 8TQ080GS 8TQ100GS 80 100 Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters 8TQ Units 8 A IF(AV) Max. Average Forward Current * See Fig. 5 IFSM Max. Peak One Cycle Non-Repetitive 850 Surge Current * See Fig. 7 230 EAS Non-Repetitive Avalanche Energy 7.50 mJ IAR Repetitive Avalanche Current 0.50 A A Conditions 50% duty cycle @ TC = 157 C, rectangular wave form 5s Sine or 3s Rect. pulse 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 C, IAS = 0.50 Amps, L = 60 mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM 8TQ Max. Forward Voltage Drop (1) * See Fig. 1 IRM Max.
peration Guard ring for enhanced ruggedness and long term reliability Case Styles 8TQ... GS Base Cathode 1 Cathode 3 Anode D2PAK Document Number: 93416 www.vishay.com 1 8TQ...GS Series Bulletin PD-20837 rev. A 01/06 Voltage Ratings Part number VR 8TQ080GS 8TQ100GS 80 100 Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters 8TQ Units 8 A IF(AV) Max. Average Forward Current * See Fig. 5 IFSM Max. Peak One Cycle Non-Repetitive 850 Surge Current * See Fig. 7 230 EAS Non-Repetitive Avalanche Energy 7.50 mJ IAR Repetitive Avalanche Current 0.50 A A Conditions 50% duty cycle @ TC = 157 C, rectangular wave form 5s Sine or 3s Rect. pulse 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 C, IAS = 0.50 Amps, L = 60 mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM 8TQ Max. Forward Voltage Drop (1) * See Fig. 1 IRM Max.
tage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Case Styles 8TQ... GS Base Cathode 1 Cathode 3 Anode D2PAK www.irf.com 1 8TQ...GS Series Bulletin PD-20837 rev. A 01/06 Voltage Ratings Part number VR 8TQ080GS 8TQ100GS 80 100 Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters 8TQ Units 8 A IF(AV) Max. Average Forward Current * See Fig. 5 IFSM Max. Peak One Cycle Non-Repetitive 850 Surge Current * See Fig. 7 230 EAS Non-Repetitive Avalanche Energy 7.50 mJ IAR Repetitive Avalanche Current 0.50 A A Conditions 50% duty cycle @ TC = 157 C, rectangular wave form 5s Sine or 3s Rect. pulse 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 C, IAS = 0.50 Amps, L = 60 mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM 8TQ Max. Forward Voltage Drop (1) * See Fig. 1 IRM Max.