8TQ100GPBF Vishay High Power Products Schottky Rectifier FEATURES (R) * 175 C TJ operation * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Low forward voltage drop * High frequency operation * Guard ring for enhanced ruggedness and long term reliability * Lead (Pb)-free ("PbF" suffix) * Designed and qualified for industrial level Base cathode 3 Anode 1 Cathode TO-220AC DESCRIPTION The 8TQ...GPbF schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. PRODUCT SUMMARY IF(AV) 8A VR 100 V MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VALUES UNITS 8 A 100 V Retangular waveform VRRM IFSM at tp = 5 s sine 850 A VF at 8 Apk, TJ = 125 C 0.58 V TJ Range - 55 - 175 C VOLTAGE RATIN
8TQ100GPBF Vishay High Power Products Schottky Rectifier, 8 A FEATURES (R) * * * * 175 C TJ operation Pb-free Low forward voltage drop Available High frequency operation RoHS* High purity, high temperature epoxy COMPLIANT encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Lead (Pb)-free ("PbF" suffix) * Designed and qualified for industrial level Base cathode 2 TO-220AC 1 Cathode 3 Anode DESCRIPTION The 8TQ...GPbF Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. PRODUCT SUMMARY IF(AV) 8A VR 100 V MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES Rectangular waveform VRRM UNITS 8 A 100 V IFSM tp = 5 s sine 850 A VF 8 Apk, TJ = 125 C 0.58 V
8TQ100GPBF Vishay High Power Products Schottky Rectifier, 8 A FEATURES * * * * 175 C TJ operation Pb-free Low forward voltage drop Available High frequency operation High purity, high temperature epoxy RoHS* COMPLIANT encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Lead (Pb)-free ("PbF" suffix) * Designed and qualified for industrial level Base cathode 2 TO-220AC 3 Anode 1 Cathode DESCRIPTION PRODUCT SUMMARY IF(AV) 8A VR 100 V The 8TQ...GPbF Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES Rectangular waveform VRRM UNITS 8 A 100 V IFSM tp = 5 s sine 850 A VF 8 Apk, TJ = 125 C 0.58 V TJ
8TQ100GPBF Vishay High Power Products Schottky Rectifier, 8 A FEATURES * * * * 175 C TJ operation Pb-free Low forward voltage drop Available High frequency operation High purity, high temperature epoxy RoHS* COMPLIANT encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Lead (Pb)-free ("PbF" suffix) * Designed and qualified for industrial level Base cathode 2 TO-220AC 3 Anode 1 Cathode DESCRIPTION PRODUCT SUMMARY IF(AV) 8A VR 100 V The 8TQ...GPbF Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES Rectangular waveform VRRM UNITS 8 A 100 V IFSM tp = 5 s sine 850 A VF 8 Apk, TJ = 125 C 0.58 V TJ
8TQ100GPBF Vishay High Power Products Schottky Rectifier, 8 A FEATURES * * * * 175 C TJ operation Pb-free Low forward voltage drop Available High frequency operation High purity, high temperature epoxy RoHS* COMPLIANT encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Lead (Pb)-free ("PbF" suffix) * Designed and qualified for industrial level Base cathode 2 TO-220AC 3 Anode 1 Cathode DESCRIPTION PRODUCT SUMMARY IF(AV) 8A VR 100 V The 8TQ...GPbF Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES Rectangular waveform VRRM UNITS 8 A 100 V IFSM tp = 5 s sine 850 A VF 8 Apk, TJ = 125 C 0.58 V TJ
S UNITS 8 A Rectangular waveform VRRM 100 V IFSM tp = 5 s sine 850 A VF 8 Apk, TJ = 125 C 0.58 V TJ Range - 55 to 175 C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-8TQ080GPbF VS-8TQ080G-N3 VS-8TQ100GPBF VS-8TQ100G-N3 UNITS 80 80 100 100 V ABSOLUTE MAXIMUM RATINGS SYMBOL TEST CONDITIONS VALUES Maximum average forward current See fig. 5 IF(AV) 50 % duty cycle at TC = 157 C, rectangular waveform 8 Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 0.50 A, L = 60 mH 7.50 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A PARAMETER Repetitive avalanche current Revision: 11-Oct-11 5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 850 UNITS A 230 Document Number: 94263 1 For technical questions within your region: DiodesAmericas@vishay.com, Dio
S UNITS 8 A Rectangular waveform VRRM 100 V IFSM tp = 5 s sine 850 A VF 8 Apk, TJ = 125 C 0.58 V TJ Range - 55 to 175 C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM VS-8TQ080GPbF VS-8TQ080G-N3 VS-8TQ100GPBF VS-8TQ100G-N3 UNITS 80 80 100 100 V ABSOLUTE MAXIMUM RATINGS SYMBOL TEST CONDITIONS VALUES Maximum average forward current See fig. 5 IF(AV) 50 % duty cycle at TC = 157 C, rectangular waveform 8 Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 0.50 A, L = 60 mH 7.50 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 0.50 A PARAMETER Repetitive avalanche current Revision: 11-Oct-11 5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 850 UNITS A 230 Document Number: 94263 1 For technical questions within your region: DiodesAmericas@vishay.com, Dio
S-8TQ100GSPBF Power D PAK 80 100 0.58 8 175 16 VS-16CTQ100GSPBF (2)(3)(5)(6) Power D PAK 60 - 80 - 100 0.69 8 175 20 VS-MBRB20100CTGPBF Power (2)(3)(5)(6) D2PAK 100 0.85 10 175 30 VS-30CTQ100GSPBF Power D PAK 80 100 0.82 15 175 40 VS-43CTQ100GSPBF Power 8 8TQ100GPBF 16 (3) (1)(3)(5)(6) (2)(3)(5)(6) 2 2 2 D PAK 80 100 0.81 20 175 Power (2)(6) TO-220 60 - 80 - 100 0.58 8 175 16CTQ100GPBF Power TO-220 60 - 80 - 100 0.69 8 175 30 30CTQ100GPBF (1)(6) Power TO-220 80 100 0.82 15 175 60 63CTQ100GPBF Power (1)(6) TO-220 100 0.83 30 175 40 43CTQ100GPBF Power TO-220 100 0.81 20 175 16 16CTQ100G-1PBF Power (1)(5)(6) TO-262 80 100 0.69 8 175 20 MBR20100CTG-1P Power TO-262 80 100 0.85 10 175 30 30CTQ100G-1PBF (1)(5)(6) Power TO-262 80 100 0.82 15 175 40 43CTQ100G-1PBF Power (1)(5)(6) TO-262 80 100 0.81 20 175 30 30CPQ100GPBF Power TO-247 80 100 0.81 15 175 40 40CPQ100GPBF (1)(6) Power TO-247 80 100 0.75 20 175 60 63CPQ100GPBF Power (1)(6) TO-247 80 100 0.76 30 175 (2)(3)(5)(6) (1)(6) (1)(6) (1)(5)(6) (1)(6) 1
Plastic SMD D PAK 60 - 80 - 100 0.69 8 175 20 VS-MBRB20100CTGPBF I Power Plastic SMD(2)(3)(6)(7) D2PAK 100 0.85 10 175 30 VS-30CTQ100GSPBF I Power Plastic SMD D PAK 80 to100 0.82 15 175 40 VS-43CTQ100GSPBF I Power Plastic SMD D PAK 80 to100 0.81 20 175 8 8TQ100GPBF I Power Plastic Through Hole(2)(7) TO-220 60 - 80 - 100 0.58 8 175 16 16CTQ100GPBF I Power Plastic Through Hole(1)(7) TO-220 60 - 80 - 100 0.69 8 175 30 30CTQ100GPBF I Power Plastic Through Hole (1)(7) TO-220 80 to 100 0.82 15 175 60 63CTQ100GPBF I Power Plastic Through Hole(1)(7) TO-220 100 0.83 30 175 40 43CTQ100GPBF I Power Plastic Through Hole(1)(7) TO-220 100 0.81 20 175 16 16CTQ100G-1PBF I Power Plastic Through Hole(1)(6)(7) TO-262 80 to 100 0.69 8 175 20 MBR20100CTG-1P I Power Plastic Through Hole TO-262 80 to 100 0.85 10 175 30 30CTQ100G-1PBF I (1)(6)(7) Power Plastic Through Hole TO-262 80 to 100 0.82 15 175 40 43CTQ100G-1PBF I Power Plastic Through Hole(1)(6)(7) TO-262 80 to 100 0.81 20 175 30 30CPQ100GPBF I Power Plastic Th
2 5 175 IF(AV) (A) Device(5) Source(4) 3 30BQ100GPBF I Plastic SMD(1)(3)(9) 5 VS-50SQ100Gx I Plastic Axial(1)(3)(9) 5 VS-50SQ100Gx-M3 I Plastic Axial DO-204AR 60-80-100 0.52 5 175 8 VS-8TQ100GSxPBF I Power Plastic SMD(1)(3)(6) D2PAK 80-100 0.58 8 175 8 VS-8TQ100GPBF I Power Plastic Through Hole(1)(8) TO-220AC 80-100 0.58 8 175 8 VS-8TQ100G-N3 I Power Plastic Through Hole(1)(7) TO-220AC 80-100 0.58 8 175 16 VS-16CTQ100GSxPBF I Power Plastic SMD(2)(3)(6) D2PAK 60-80-100 0.69 8 175 16 VS-16CTQ100GPBF I Power Plastic Through Hole(2)(8) TO-220AB 60-80-100 0.69 8 175 Family Type (1)(3)(7) 16 VS-16CTQ100G-N3 I TO-220AB 60-80-100 0.69 8 175 16 VS-16CTQ100G-1PBF I Power Plastic Through Hole Power Plastic Through Hole(2)(6) TO-262 80-100 0.69 8 175 20 VS-MBRB20100CTGxPBF I Power Plastic SMD(2)(3)(6) D2PAK 100 0.85 10 175 20 VS-MBR20100CTG-1P I Power Plastic Through Hole TO-262 80-100 0.85 10 175 30 VS-30CTQ100GSxPBF I Power Plastic SMD(2)(3)(6) D2-PAK 80-100 0.82 15 175 30 VS-30CTQ100GPBF I Power Plastic T