8TQ100SHM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 D2PAK (TO-263AB) * * * * 175 C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C 3 Anode 1 N/C PRODUCT SUMMARY IF(AV) 8A * AEC-Q101 qualified meets JESD 201 class 1A whisker test VR 80 V, 100 V VF at IF 0.58 V IRM 7 mA at 125 C TJ max. 175 C EAS 7.5 mJ Package D2PAK (TO-263AB) Diode variation Single * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power s
8TQ100SPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES * * * * Base cathode 2 * D2PAK 3 Anode 1 N/C * * * 175 C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Halogen-free according to IEC 61249-2-21 definition Compliant to RoHS directive 2002/95/EC * AEC-Q101 qualified PRODUCT SUMMARY DESCRIPTION IF(AV) 8A VR 80 V/100 V The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM Range IFSM tp = 5
8TQ100SHM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 175 C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C 3 Anode 1 D2PAK * * * * N/C PRODUCT SUMMARY IF(AV) 8A * AEC-Q101 qualified meets JESD 201 class 1A whisker test VR 80 V, 100 V VF at IF 0.58 V IRM 7 mA at 125 C TJ max. 175 C EAS 7.5 mJ Package TO-263AB (D2PAK) Diode variation Single die * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies
8TQ100SPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES * * * * Base cathode 2 * D2PAK 3 Anode 1 N/C * * * 175 C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Halogen-free according to IEC 61249-2-21 definition Compliant to RoHS directive 2002/95/EC * AEC-Q101 qualified PRODUCT SUMMARY DESCRIPTION IF(AV) 8A VR 80 V/100 V The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM Range IFSM tp = 5
8TQ100SPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES * * * * Base cathode 2 * D2PAK 3 Anode 1 N/C * * * 175 C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Halogen-free according to IEC 61249-2-21 definition Compliant to RoHS directive 2002/95/EC * AEC-Q101 qualified PRODUCT SUMMARY DESCRIPTION IF(AV) 8A VR 80 V/100 V The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM Range IFSM tp = 5
8TQ100S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 * * * * 175 C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C 2 1 3 Anode 1 3 N/C D2PAK (TO-263AB) PRIMARY CHARACTERISTICS * Designed and qualified according to JEDEC(R)-JESD 47 IF(AV) 8A VR 80 V, 100 V VF at IF 0.58 V * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 IRM 7 mA at 125 C TJ max. 175 C EAS 7.5 mJ Package D2PAK (TO-263AB) Circuit configuration Single DESCRIPTION The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in
8TQ100S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 * * * * 3 Anode 1 D2PAK 175 C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C N/C PRODUCT SUMMARY * Designed and qualified according to JEDEC(R)-JESD 47 IF(AV) 8A VR 80 V, 100 V * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 VF at IF 0.58 V IRM 7 mA at 125 C TJ max. 175 C EAS 7.5 mJ Package TO-263AB (D2PAK) Diode variation Single die DESCRIPTION The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, c
@szshouhe.com SHENZHEN SHOUHE TECHNOLOGY CO., LTD. 8TQ100GSTRL 8TQ100GSTRR TEL: 0755-8380 8450 FAX: 0755-8380 8425 Discrete Schottky Discrete Schottky D2PAK D2PAK 800 100V 8.000A D2PAK 800 100V 8.000A D2PAK 0 0 0 0 0 0 0 ME 0 ME 8TQ100GS Discrete Schottky 8TQ100STRRPBF Discrete Schottky 8TQ100STRLPBF Discrete Schottky D2PAK D2PAK D2PAK 50 100V 8A Schottky Discrete Diode in a D2-Pak package 800 100V 8.000A D2PAK 800 100V 8.000A D2PAK 0 1 1 0 1 1 0 0 0 0 ME 0 ME 0 ME 8TQ100SPBF Discrete Schottky D2PAK 50 100V 8A Schottky Discrete Diode in a D2-Pak package 1 1 0 0 ME 8TQ100STRR Discrete Schottky D2PAK 800 100V 8A Schottky Discrete Diode in a D2-Pak package 0 0 0 0 ME 8TQ100STRL Discrete Schottky D2PAK 800 100V 8A Schottky Discrete Diode in a D2-Pak package 0 0 0 0 ME 8TQ100S 90MT100KPBF 90MT100KB 90MT120KPBF 90MT120KB 90MT140KPBF 90MT140KB 90MT160KPBF 90MT160KB 90MT80KPBF 90MT80KB Discrete Discrete Discrete Discrete Discrete Discrete D
8TQ100S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 * * * * 175 C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C 2 1 3 Anode 1 3 N/C D2PAK (TO-263AB) PRIMARY CHARACTERISTICS * Designed and qualified according to JEDEC(R)-JESD 47 IF(AV) 8A VR 80 V, 100 V VF at IF 0.58 V * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 IRM 7 mA at 125 C TJ max. 175 C EAS 7.5 mJ Package D2PAK (TO-263AB) Circuit configuration Single DESCRIPTION The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in
8TQ100SPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES * 175 C TJ operation Base cathode 2 * Low forward voltage drop * High frequency operation * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance D2PAK (TO-263AB) 3 Anode 1 N/C * Guard ring for enhanced ruggedness and long term reliability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRODUCT SUMMARY * AEC-Q101 qualified IF(AV) 8A VR 80 V, 100 V VF at IF 0.72 V IRM max. 7 mA at 125 C TJ max. 175 C EAS 7.5 mJ Package D2PAK (TO-263AB) Diode variation Single * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheelin
F 6CWQ04FNPBF 6CWQ10FNPBF TO-252AA TO-252AA TO-252AA 30 40 100 535 500 440 1.32 1.57 1.92 1.06 1.26 1.55 .817 .968 1.24 .722 .855 1.08 MBR735PBF MBR745PBF TO-220AC TO-220AC 35 45 690 690 1.25 1.25 1.00 1.00 .77 .772 .68 .682 8TQ060PBF 8TQ080SPBF 8TQ100PBF 8TQ100SPBF 8TQ100STRRPBF TO-220AC TO-220AC TO-220AC TO-263 TO-263 60 80 100 100 100 850 850 850 850 850 2.91 3.89 1.63 3.58 3.58 2.35 3.12 1.31 2.88 2.88 1.88 2.85 1.05 2.62 2.62 1.64 2.29 .922 2.11 2.11 STPS1045BPBF MBR1045PBF 10CTQ150PBF TO-252AA TO-220AC TO-220AB 45 45 150 390 1060 620 1.67 1.47 1.32 1.35 1.18 1.05 1.08 .909 .813 .945 .804 .718 12CWQ03FNPBF 12CWQ06FNPBF 12CWQ10FNPBF TO-252AA TO-252AA TO-252AA 30 60 100 320 320 330 1.63 1.61 1.63 1.30 1.29 1.30 1.00 .991 1.00 .887 .887 15TQ060PBF 15TQ060STRLPBF TO-220AC TO-252AA 60 60 1000 1000 2.95 3.91 2.37 3.14 1.90 2.86 1.66 2.30 16CTQ100PBF 16CTQ100SPBF TO-220AB TO-252AA 100 100 850 850 2.46 5.12 1.98 4.11 1.58 3.75 1.39 3.01 18TQ045PBF TO-220AC 45 1800 2.64 2.12 1.70 1.48 19
4001 R0 1N4002 R0 1N4003 R0 1N4004 R0 1N4006 R0 1N4007 R0 1N5401 R0 1N5404 R0 1N5406 R0 1N5408 R0 Order Code Compliant Non-compliant 6A to 40A, TO-263 (D2-Pak) Pin Config. (a) (b) 1 123 KKA AKA 3 Mfr. Mftrs. List No. 6TQ045SPBF MBRB745 MBRB745 8TQ080S.PBF 8TQ100SPBF 15CTQ045S.PBF MBRB1660 MBRB1660 413123 Price Each Mftrs. List No. Order Code 910-1195 910-0652 910-0679 910-0709 910-0784 910-0830 910-0768 910-1004 910-0903 910-0946 910-1330 910-1373 910-1349 955-0070 955-0062 15CTQ045S.PBF 18TQ045S.PBF 19TQ015SPBF 20L15TSPBF 30CTQ045SPBF 30CTQ060SPBF 32CTQ030SPBF 40CTQ045SPBF 43CTQ100SPBF 47CTQ020SPBF 6TQ045SPBF 8TQ080S.PBF 8TQ100SPBF MBRB745 MBRB1660 1+ 25+ 100+ 2.03 2.43 2.80 1.11 3.00 3.06 3.60 2.60 3.18 3.20 2.87 2.19 2.90 0.99 4.04 1.10 1.31 1.70 0.57 1.78 - - 2.00 1.44 1.63 1.77 - - 1.19 1.76 0.69 - - 0.95 1.14 1.43 0.52 1.47 - - 1.32 1.07 1.28 1.32 - - 0.99 1.37 0.58 - - Input Rectifiers TO-220AC TO-247AC D2-Pak For free legislation advice visit www.global-legislation.com TO-247
8TQ100SPbF Vishay High Power Products Schottky Rectifier, 8 A FEATURES * 175 C TJ operation Base cathode 2 * Low forward voltage drop * High frequency operation * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability 3 Anode 1 D2PAK N/C * Compliant to RoHS directive 2002/95/EC * Halogen-free according to IEC 61249-2-21 definition * AEC-Q101 qualified DESCRIPTION PRODUCT SUMMARY IF(AV) 8A VR 80 V/100 V The 8TQ... Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM Range IFSM tp = 5 s sine VF 8 Apk, TJ = 125 C TJ Range VALUES UNITS 8 A 80/100 V
C7.5 35 690 .80 844-MBR745PBF MBR745PBF TO-220AC7.5 45 690 .80 8.0 Amp 80SQ035 DO-204AR8.0 35 2400 .55 844-80SQ035 844-80SQ040 80SQ040 DO-204AR8.0 40 24001.36 844-80SQ045 80SQ045 DO-204AR8.0 45 24001.63 844-8TQ100PBF 8TQ100PBF TO-220AC8.0 100 850 1.36 844-8TQ100SPBF 8TQ100SPBF TO-263 8.0 1008501.25 844-8TQ100STRRPBF 8TQ100STRRPBF TO-263 8.0 1008501.25 9.0 Amp 844-95SQ015 95SQ015 DO-204AR9.0 15 850 2.57 844-90SQ030 90SQ030 DO-204AR9.0 30 2150 .55 844-90SQ040 90SQ040 DO-204AR9.0 40 21501.74 844-90SQ045 90SQ045 DO-204AR9.0 45 21501.56 10.0 Amp 844-STPS1045BPBF STPS1045BPBF TO-252AA10 45 390 .98 844-MBR1045PBF MBR1045PBF TO-220AC10 45 1060 .53 844-10CTQ150PBF 10CTQ150PBF TO-220AB10 150 620 1.78 12.0 Amp 844-12CWQ03FNPBF 12CWQ03FNPBF TO-252AA12 30 320 .58 844-12CWQ06FNPBF 12CWQ06FNPBF TO-252AA12 60 320 .65 844-12CWQ10FNPBF 12CWQ10FNPBF TO-252AA12 100 330 .65 (c) Copyright 2011 Mouser Electronics mouser.com/vishaysemiconductors 10 100 500 .259 .099 .29 .29 .402 .3
70) 0.61 (0.02) MAX . 5.08 (0.20) REF. Conform to JEDEC outline D2Pak (SMD-220) Dimensions in millimeters and inches www.irf.com 8.89 (0.35) 2 3.81 (0.15) 2.08 (0.08) 2X 2.54 (0.10) 2X 1 8TQ...S Series PD-2.561 05/98 Voltage Ratings Part number VR 8TQ080S 8TQ100S 80 100 Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) Absolute Maximum Ratings Parameters 8TQ...S Units IF(AV) Max. Average Forward Current * See Fig. 5 8 A Max. Peak One Cycle Non-Repetitive 850 Surge Current * See Fig. 7 230 EAS Non-Repetitive Avalanche Energy 7.50 mJ IAR Repetitive Avalanche Current 0.50 A IFSM Conditions 50% duty cycle @ T C = 159 C, rectangular wave form 5s Sine or 3s Rect. pulse A 10ms Sine or 6ms Rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 C, IAS= 0.50 Amps, L = 60 mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM Max. Forward Voltage Drop 8TQ...S Units (1) * See Fi